Sichuan, China

Fei Xiang

This inventor holds 1 USPTO granted patent. Top assignee: Institute of Applied Electronics, Caep. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Xiang. Retrieved from https://idiyas.com/inventor/fei-xiang-4phhyqn7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Fei Xiang: Innovator in Pulse Power Technology

Introduction

Fei Xiang is a notable inventor based in Sichuan, China. He has made significant contributions to the field of pulse power technology. His innovative work has led to the development of a unique pulse power device that showcases his expertise and creativity.

Latest Patents

Fei Xiang holds a patent for a "Pulse power device based on annular ceramic solid state line." This device comprises several pulse forming lines, two charging inductors, and several gas switches that are interconnected based on Marx voltage superposition. The design features annular pulse forming lines, each equipped with a gas switch on its annular surface. These lines are arranged in a column structure, enhancing the efficiency and functionality of the device.

Career Highlights

Fei Xiang is affiliated with the Institute of Applied Electronics, where he continues to push the boundaries of technology. His work in pulse power devices has garnered attention for its innovative approach and practical applications.

Collaborations

Fei has collaborated with several talented individuals in his field, including Min Luo and Guangyao Luo. Their combined efforts contribute to the advancement of technology in pulse power systems.

Conclusion

Fei Xiang's contributions to pulse power technology exemplify his dedication to innovation and research. His patent and collaborative efforts highlight the importance of teamwork in achieving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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