Fei Peng

Title: Fei Peng and an Improved SGT MOSFET Manufacturing Method.

Introduction

Fei Peng is an inventor based in Chongqing, China, associated with Chongqing Alpha and Omega Semiconductor Limited. His patent work concerns power semiconductor device manufacturing, including a method designed to simplify the formation of contact holes in an SGT MOSFET.

Latest Patents

Peng is credited with 1 patent: “SGT MOSFET Device and Manufacturing Method of Contact Holes of SGT MOSFET Device.” The invention describes preparing gate, source, shielding-gate, and pre-embedded ESD trenches, followed by forming the cell structure and relevant ESD, body, and source regions through ion implantation.

The method pre-embeds an ESD structure to reduce depth differences among the gate, source, shielding-gate, and ESD contact holes. This allows the contact holes to be prepared using a single photolithography process. According to the patent description, the approach eliminates one photolithography process and one ESD polysilicon growth process, helping reduce manufacturing costs and process complexity.

Career Highlights

Peng’s documented patent contribution focuses on semiconductor fabrication and the manufacturing of SGT MOSFET devices. The described process addresses contact-hole formation by coordinating trench and ESD structures to make fabrication more efficient.

Collaborations

The provided information lists Liang Shi and Yi Zhao as Peng’s coworkers. It does not specify their roles in the patent or whether they collaborated on this invention.

Conclusion

Fei Peng’s patent presents a manufacturing approach for SGT MOSFET contact holes that aims to reduce process steps, cost, and fabrication difficulty.