Xi'an, China

Fei Luo

This inventor holds 1 USPTO granted patent. Top assignee: Longi Green Energy Technology Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Luo. Retrieved from https://idiyas.com/inventor/fei-luo-0mgvmt5p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Fei Luo and Back-Contact Solar Cell Innovation

Introduction

Fei Luo is an inventor based in Xi’an, China, whose patent work concerns photovoltaic technology. His disclosed invention addresses the structure and preparation of a back-contact solar cell.

Latest Patents

Luo is associated with 1 patent: “Back Contact Solar Cell, Preparation Method Therefor, and Photovoltaic Module.” The disclosure describes a silicon substrate with first and second conductive regions separated by an insulation region. It also describes transport layers on those regions, with the second transport layer extending across the insulation region and partially covering the first transport layer. The thickness of the portion over the insulation region is greater than the portion over the second conductive region. The patent presents this arrangement as part of a back-contact solar cell and its preparation method, with applications in photovoltaic modules.

Career Highlights

Luo is associated with Longi Green Energy Technology Co., Ltd., a company working in solar and photovoltaic technology. His patent reflects work on solar-cell design and manufacturing methods.

Collaborations

The provided information lists Zhenguo Li and Tuan Yuan as Luo’s coworkers. Their inclusion indicates professional connections, but no specific joint patent or collaboration details were provided.

Conclusion

Fei Luo’s disclosed patent focuses on a back-contact solar-cell structure and preparation method, contributing to innovation in photovoltaic technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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