Los Angeles, CA, United States of America

Faxian Xiu


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Faxian Xiu

Introduction

Faxian Xiu is a notable inventor based in Los Angeles, California, recognized for his contributions to the field of spintronics. He holds a patent that showcases his groundbreaking work in developing advanced semiconductor technologies, particularly focusing on the integration of magnetic and electric properties in materials.

Latest Patents

Xiu's latest patent, titled "Spin transistor having multiferroic gate dielectric," introduces a novel type of spin transistor that leverages a Dilute Magnetic Semiconductor (DMS) channel. This innovative design includes a gate stack formed on the DMS channel, which features a multiferroic gate dielectric. The unique aspect of this multiferroic material is its ability to exhibit magnetoelectric properties, which facilitates electrically modulated magnetic exchange bias. Specifically, the material used in one embodiment is Bismuth Ferrite (BiFeO3), while the DMS channel is constructed from Manganese Germanium (MnGe), capturing the essence of advanced material science and its applications in modern technology.

Career Highlights

Faxian Xiu is affiliated with the University of California, where his research is at the forefront of semiconductor innovation. His work has significant implications for developing faster and more efficient electronic devices by harnessing the principles of spintronics to create components that can operate at unprecedented speeds with lower energy consumption.

Collaborations

Throughout his career, Xiu has collaborated with esteemed colleagues, including Kang-Lung Wang and Ajey Poovannummoottil. These partnerships have fostered an environment of shared expertise and innovation, contributing to the advancement of research in the fields of materials science and semiconductor technology.

Conclusion

In summary, Faxian Xiu's inventive spirit and dedication to research have led to significant advancements in spintronic technology. His patent for a spin transistor with a multiferroic gate dielectric positions him as a key player in the evolution of semiconductor devices. As the field continues to grow, Xiu's contributions will undoubtedly influence future innovations in electronic materials and technologies.

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