The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 25, 2011
Kang-lung Wang, Santa Monica, CA (US);
Ajey Poovannummoottil, Marina Del Rey, CA (US);
Faxian Xiu, Los Angeles, CA (US);
Kang-Lung Wang, Santa Monica, CA (US);
Ajey Poovannummoottil, Marina Del Rey, CA (US);
Faxian Xiu, Los Angeles, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO(BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.