Farrokh Mohammadi

Title: Farrokh Mohammadi: Innovator in Semiconductor Technology

Introduction

Farrokh Mohammadi is a notable inventor based in Los Altos, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Dmost junction breakdown enhancement." This invention addresses the body to drain junction breakdown in DMOST devices, which can be controlled to lower electric field gradients near the PN junction. The structure employed enhances breakdown behavior specifically for vertical DMOST devices. By tailoring the N type doping profile, the avalanche breakdown voltage can be increased by up to 40% compared to conventional PN junction diodes.

Another significant patent is for the application of deep-junction non-self-aligned transistors. This invention provides a method for fabricating a deep junction, non-self-aligned MOS transistor that suppresses hot carrier injection. The design includes spaced-apart substrate regions of opposite conductivity, resulting in improved reliability over self-aligned MOS devices.

Career Highlights

Farrokh Mohammadi is currently associated with National Semiconductor Corporation, where he continues to innovate in semiconductor technology. His work has had a lasting impact on the industry, particularly in enhancing device performance and reliability.

Collaborations

Throughout his career, Farrokh has collaborated with notable colleagues, including Chan S Pang and Chin-Miin Shyu. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Farrokh Mohammadi's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.