Quèvrechain, France

Farid Medjdoub


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 28(Granted Patents)


Location History:

  • Quévrechain, FR (2012)
  • Quèvrechain, FR (2014)

Company Filing History:


Years Active: 2012-2014

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2 patents (USPTO):Explore Patents

Title: Farid Medjdoub: Innovator in Semiconductor Technology

Introduction

Farid Medjdoub is a notable inventor based in Quèvrechain, France. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Farid Medjdoub's latest patents include a "Method of forming a semiconductor device" and an "Enhancement mode semiconductor device." Both patents describe a semiconductor device that features a first and second active layer on a substrate. The second active layer has a higher bandgap than the first, is substantially Ga-free, and includes at least aluminum. The devices are designed with a gate insulating layer formed by thermal oxidation and include a gate electrode, source electrode, and drain electrode. Notably, when in operation, a two-dimensional electron gas layer is created between the first and second active layers, enhancing the device's functionality.

Career Highlights

Farid Medjdoub is currently employed at Imec, a leading research and innovation hub in nanoelectronics and digital technologies. His work at Imec has positioned him as a key player in advancing semiconductor technologies.

Collaborations

Farid collaborates with esteemed colleagues such as Joff Derluyn and Marianne Germain, contributing to a dynamic research environment that fosters innovation.

Conclusion

Farid Medjdoub's contributions to semiconductor technology through his patents and work at Imec highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.

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