Cupertino, CA, United States of America

Farhad Taghibakhsh

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignees: Perkinelmer Holdings, Inc., Qualcomm Incorporated. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Farhad Taghibakhsh. Retrieved from https://idiyas.com/inventor/farhad-taghibakhsh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2016-2020

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2 patents (USPTO):Explore Patents

Title: Farhad Taghibakhsh: Innovator in Ultrasonic and Radiation Imaging Technologies

Introduction

Farhad Taghibakhsh is a notable inventor based in Cupertino, CA (US). He has made significant contributions to the fields of ultrasonic and radiation imaging technologies. With a total of 2 patents, his work showcases innovative approaches to signal processing and imaging systems.

Latest Patents

One of his latest patents is focused on ultrasonic transducer pixel readout circuitry and methods for ultrasonic phase imaging. This invention provides examples of systems, apparatus, circuitry, methods, and computer-readable media associated with the transmission of an ultrasonic signal. The ultrasonic transducer is designed to receive a reflected acoustic signal with a first phase. A switch is controlled to transition from off to on during the resetting of a sampling node, remain on for a delay period, and switch off at the time of sampling the received signal. This process allows for the detection of a sampled signal with a second phase that differs from the first phase.

Another significant patent involves a radiation imaging device that incorporates a metal-insulator-semiconductor photodetector and a thin film transistor. This photosensor pixel consists of a thin film transistor (TFT) and a metal-insulator-semiconductor (MIS) photodetector. The TFT includes a gate, a gate insulator layer, a semiconductor layer forming a channel region, a drain, and a source. The MIS photodetector features a transparent conductor layer, a semiconductor layer with photosensitive properties, and an insulator layer positioned between the transparent conductor layer and the semiconductor layer. The semiconductor layer of the MIS photodetector connects to either the source or the drain of the TFT, with the insulator layer's thickness being less than that of the gate insulator layer of the TFT.

Career Highlights

Throughout his career, Farhad Taghibakhsh has worked with prominent companies such as PerkinElmer Holdings, Inc. and Qualcomm Incorporated. His experience in these organizations has contributed to his expertise in developing advanced technologies in imaging and signal processing.

Collaborations

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Conclusion

Farhad Taghibakhsh's innovative work in ultrasonic and radiation imaging technologies highlights his significant contributions to the field. His patents reflect a commitment to advancing technology and improving imaging systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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