Beijing, China

Fanhua Hu

This inventor holds 1 USPTO granted patent. Top assignee: Beijing Asahi Electronic Materials Co., Ltd. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fanhua Hu. Retrieved from https://idiyas.com/inventor/fanhua-hu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Fanhua Hu: Innovator in Photoresist Technology

Introduction

Fanhua Hu is a prominent inventor based in Beijing, China. He has made significant contributions to the field of photoresist technology, which is crucial for the semiconductor manufacturing process. His innovative work has led to the development of a unique photoresist composition that enhances production efficiency.

Latest Patents

Fanhua Hu holds 1 patent for his invention titled "Photoresist composition, method for preparing the same, and patterning method." This patent describes a photoresist composition that includes a specific combination of a photosensitizer, phenolic resin, additives, and solvents. The composition is designed to ensure high resolution and sensitivity, meeting the demands of actual production requirements.

Career Highlights

Fanhua Hu is associated with Beijing Asahi Electronic Materials Co., Ltd., where he applies his expertise in developing advanced materials for electronic applications. His work has been instrumental in improving the performance of photoresist materials used in the semiconductor industry.

Collaborations

Fanhua Hu has collaborated with notable colleagues such as Teng Zhang and Kejun Lu. Their combined efforts have contributed to advancements in the field of electronic materials.

Conclusion

Fanhua Hu's innovative contributions to photoresist technology highlight his role as a key inventor in the semiconductor industry. His work continues to influence the development of high-performance materials essential for modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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