Shanghai, China

Fangfang Zhao

This inventor holds 2 USPTO granted patents. Top assignees: Abb Schweiz Ag, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2011-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fangfang Zhao. Retrieved from https://idiyas.com/inventor/fangfang-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011-2023

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2 patents (USPTO):Explore Patents

Title: Innovative Contributions of Inventor Fangfang Zhao

Introduction

Fangfang Zhao, an inventive mind located in Shanghai, China, has made significant strides in the field of technology through her groundbreaking work. With an impressive portfolio of two patents, she has led efforts to enhance robotic processes and improve semiconductor models, demonstrating a strong commitment to innovation and excellence in her field.

Latest Patents

Fangfang Zhao’s latest patents showcase her expertise in advanced technologies. The first patent is titled "Method and apparatus for adjusting robot motion path," which involves a sophisticated procedure for adjusting the motion path of robots. In this method, a first processing procedure is conducted on a workpiece to produce a product, after which process data is collected to describe the processing attributes. Using this data, the robot’s motion path for a subsequent processing step is optimized. This innovation is pivotal for improving the efficiency of automated robotics in production lines.

The second patent is "Method for building MOS transistor model and method for verifying MOS transistor model." This invention focuses on constructing a MOS transistor model that accounts for statistical variations of noise from different dies. It includes the creation of a noise distribution diagram based on measured noise data, ensuring a more accurate simulation of noise behavior in MOS transistors. The precision gained through her method is crucial for enhancing the reliability of semiconductor devices.

Career Highlights

Fangfang Zhao has contributed to her field through positions at recognized companies such as Semiconductor Manufacturing International Corporation and ABB Schweiz AG. Her roles in these organizations have allowed her to research and innovate in semiconductor technology and robotics, further proving her prowess as an inventor.

Collaborations

Throughout her career, Fangfang has collaborated with talented professionals including Juncheng Huang and Lei Mao. These collaborations have fostered an environment of creativity and knowledge sharing, which has undoubtedly influenced the inventive processes that led to her patents.

Conclusion

Fangfang Zhao stands out as a dedicated inventor whose contributions to robotics and semiconductor technology are significant. Her latest patents not only exemplify her innovative spirit but also serve to advance the industries in which she operates. As she continues to work towards pioneering advancements, her impact on technology will be felt for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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