Shanghai, China

Fang Qi

This inventor holds 2 USPTO granted patents and 4 published patent applications. Top assignees: Xpt Eds (Hefei) Co., Ltd., Xpt Eds (Hefei) Co., Ltd.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fang Qi. Retrieved from https://idiyas.com/inventor/fang-qi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Fang Qi - Innovator in Power Semiconductor Technology

Introduction

Fang Qi is a notable inventor based in Shanghai, China. He has made significant contributions to the field of power semiconductor technology. His innovative work has led to the development of a patented technology that enhances the efficiency and performance of semiconductor modules.

Latest Patents

Fang Qi holds a patent for a power semiconductor module. This invention is crucial for various applications in electronics and energy management. The patent showcases his expertise and commitment to advancing technology in this area. He has 1 patent to his name, reflecting his innovative capabilities.

Career Highlights

Fang Qi is currently employed at XPT EDS (Hefei) Co., Ltd. His role at the company allows him to work on cutting-edge technologies and collaborate with other talented professionals in the field. His contributions have been instrumental in driving the company's success in semiconductor solutions.

Collaborations

Fang Qi has worked alongside talented colleagues, including Zihao Zhao and Xiaogang Wang. Their collaborative efforts have fostered an environment of innovation and creativity, leading to advancements in their projects.

Conclusion

Fang Qi is a prominent figure in the semiconductor industry, with a focus on power semiconductor modules. His work and collaborations continue to influence the field, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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