Fang-Chang Liu

Title: Fang-Chang Liu: Innovator in GaN Transistor Technology

Introduction

Fang-Chang Liu is a prominent inventor based in Toufen, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) transistors. With a total of 3 patents to his name, Liu's work is paving the way for advancements in integrated circuits.

Latest Patents

Liu's latest patents focus on GaN transistors with polysilicon layers used for creating additional components. One of his notable inventions is a GaN transistor that incorporates polysilicon layers for the creation of additional components within an integrated circuit. This innovative device features an EPI structure along with an insulating material positioned over the EPI structure. The design includes one or more polysilicon layers embedded in the insulating material, which contain n-type and p-type regions. Additionally, the device is equipped with metal interconnects on the insulating material and vias that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.

Career Highlights

Fang-Chang Liu is currently associated with Efficient Power Conversion Corporation, where he continues to push the boundaries of semiconductor technology. His expertise in GaN devices has positioned him as a key player in the industry, contributing to the development of more efficient power conversion solutions.

Collaborations

Liu has collaborated with notable colleagues such as Jianjun Cao and Robert A Beach, further enhancing the innovative environment in which he works. Their combined efforts contribute to the advancement of technology in the semiconductor field.

Conclusion

Fang-Chang Liu's work in GaN transistor technology exemplifies the spirit of innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing integrated circuit technology, making significant strides in the field.