Xi'an, China

Fan Yuan

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2021.


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal1 out of 834,411 
Other
 patents

Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations of Fan Yuan in Heat Storage Technology

Introduction

Fan Yuan is an innovative inventor based in Xi'an, China. He has made significant contributions to the field of heat storage technology. His work focuses on enhancing the efficiency and performance of heat storage systems.

Latest Patents

Fan Yuan holds a patent for a "Two-layer variable-diameter packed bed heat storage apparatus and heat storage ball preparation method." This invention discloses a two-layered packed bed heat storage apparatus that utilizes large-diameter heat storage balls in the upper layer and small-diameter balls in the lower layer. The design maximizes both the heat storage rate and density, ensuring optimal performance of the heat storage apparatus. The patent also includes a method for manufacturing the heat storage balls, which is crucial for the apparatus's effectiveness.

Career Highlights

Throughout his career, Fan Yuan has demonstrated a commitment to advancing heat storage technology. His innovative approach has led to the development of solutions that address critical performance indicators in heat storage systems. His work is recognized for its potential to improve energy efficiency in various applications.

Collaborations

Fan Yuan has collaborated with notable colleagues, including Mingjia Li and Bo Jin. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Fan Yuan's contributions to heat storage technology exemplify the impact of innovative thinking in addressing energy challenges. His patented inventions pave the way for more efficient heat storage solutions, showcasing the importance of research and development in this field.

Profile summary based on public USPTO records.
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