Hangzhou, China

Fan Fang

USPTO Granted Patents = 5 

 

Average Co-Inventor Count = 2.5

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hangzhou, CN (2013 - 2019)
  • Shenzhen, CN (2022)

Company Filing History:


Years Active: 2013-2022

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5 patents (USPTO):

Title: Fan Fang - Innovator in Quantum Dot Materials and PCIe Technology

Introduction

Fan Fang is a prominent inventor based in Hangzhou, China. He has made significant contributions to the fields of quantum dot materials and PCIe technology. With a total of 5 patents to his name, Fang's work showcases his innovative spirit and technical expertise.

Latest Patents

Fang's latest patents include a quantum dot material and its preparation method and use. This quantum dot material features a quantum dot surrounded by a first cladding layer and a second cladding layer, providing excellent water and oxygen barrier properties along with good stability. Another notable patent is a method and device for sharing PCIe I/O devices, which outlines a systematic approach to establishing mapping relationships for efficient data processing in PCIe interconnection systems.

Career Highlights

Throughout his career, Fan Fang has worked with leading technology companies, including Huawei Technologies Co., Limited and Shenzhen Planck Innovation Technology Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in technology.

Collaborations

Fang has collaborated with notable colleagues such as Xiaofeng Zhang and Feng Li. These partnerships have further enhanced his research and development efforts, leading to advancements in his areas of expertise.

Conclusion

Fan Fang's contributions to quantum dot materials and PCIe technology highlight his role as a key innovator in the field. His patents reflect a commitment to advancing technology and improving efficiency in various applications.

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