Ankara, Turkey

Fahrettin Koc

This inventor holds 1 USPTO granted patent. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fahrettin Koc. Retrieved from https://idiyas.com/inventor/fahrettin-koc-x8oeqq2t

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Fahrettin Koc

Introduction: Fahrettin Koc is a notable inventor based in Ankara, Turkey. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. His innovative approach has led to the development of a unique patent that enhances the efficiency of memory structures.

Latest Patents: Koc holds a patent for a "Dynamic random access memory (DRAM) structure with body bias voltage that can be adapted to the access pattern of cells." This invention discloses an adaptive application of bias voltages to the access transistors in DRAM cells. The technology adjusts according to the access pattern of the rows, optimizing performance based on how often the rows are accessed.

Career Highlights: Throughout his career, Fahrettin Koc has focused on advancing memory technology. His work has been recognized for its potential to improve the efficiency and speed of data access in electronic devices. Koc's innovative spirit and dedication to research have positioned him as a key figure in the field.

Collaborations: Koc has collaborated with fellow inventor Oguz Ergin, combining their expertise to push the boundaries of memory technology. Their partnership has resulted in advancements that benefit the industry and enhance the capabilities of DRAM structures.

Conclusion: Fahrettin Koc's contributions to the field of dynamic random access memory exemplify the impact of innovative thinking in technology. His patent reflects a significant advancement that could shape the future of memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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