Shanghai, China

Fabing Li

This inventor holds 1 USPTO granted patent. Top assignee: Abb Schweiz Ag. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fabing Li. Retrieved from https://idiyas.com/inventor/fabing-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Fabing Li - Innovator in Fan Technology

Introduction

Fabing Li is a notable inventor based in Shanghai, China. He has made significant contributions to the field of fan technology, particularly with his innovative designs that enhance efficiency and functionality.

Latest Patents

Fabing Li holds a patent for a fan cover, which is designed to improve the performance of fans. The fan cover includes a fan chamber that encloses a space to accommodate the fan, an air chamber configured to intake air to flow through the fan, and one or more air inlets located at the sidewall of the air chamber. This design facilitates optimal airflow, making it a valuable addition to cooling systems. His patent is a testament to his ingenuity and understanding of airflow dynamics.

Career Highlights

Fabing Li is currently employed at ABB Schweiz AG, a company known for its advancements in technology and engineering solutions. His work at ABB allows him to collaborate with other talented professionals and contribute to innovative projects that push the boundaries of technology.

Collaborations

Fabing Li works alongside Jie Zhang, a fellow innovator. Their collaboration fosters a creative environment that encourages the development of new ideas and solutions in their field.

Conclusion

Fabing Li's contributions to fan technology through his patent and work at ABB Schweiz AG highlight his role as an influential inventor. His innovative designs continue to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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