Spittal an der Drau, Austria

Fabian Anmasser

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Infineon Technologies Austria Ag. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fabian Anmasser. Retrieved from https://idiyas.com/inventor/fabian-anmasser

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Fabian Anmasser - Innovator in Ion Control Technology

Introduction

Fabian Anmasser is an inventor based in Spittal an der Drau, Austria. He is known for his work in the field of micro-fabrication and ion control technology. Although he currently holds no granted patents, his innovative ideas contribute to advancements in scientific research.

Latest Patent Applications

Fabian Anmasser's notable patent application is titled "DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW SURFACE ROUGHNESS." This micro-fabricated device is designed to control trapped ions and includes a substrate with a structured electrode layer. The structured electrode layer forms multiple electrodes of an ion trap, which is configured to trap ions in a space above the layer. The multilayer stack of the electrode layer consists of an electrically conductive smoothing layer with a planarized surface and an electrically conductive top layer. The exposed surface of the structured electrode layer has a mean surface roughness equal to or less than Ra=5 nm.

Conclusion

Fabian Anmasser's contributions to the field of ion control technology highlight his innovative spirit and dedication to advancing scientific research. His work, particularly in micro-fabrication, showcases the potential for future developments in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…