Haifa, Israel

Eyal Hartmann

This inventor holds 1 USPTO granted patent. Top assignee: Freescale Semiconductor,inc.. Active years: 2015.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Eyal Hartmann: Innovator in Memory Device Technology

Introduction

Eyal Hartmann is a notable inventor based in Haifa, Israel. He has made significant contributions to the field of memory devices, showcasing his expertise through innovative patents. His work is particularly focused on enhancing the efficiency and functionality of memory cell sensing.

Latest Patents

Eyal Hartmann holds a patent for a "Memory device and method for sensing a content of a memory cell." This invention includes a memory device designed to sense the content of a memory cell, which comprises a pair of bit-lines and a memory cell coupled between them. The sensing circuit within the device has at least two inputs for receiving respective currents from a current conveyor. When operating in a sensing mode, the circuit senses a difference between output currents, which represents the content of the memory cell. The output signal from the sensing circuit indicates the memory cell's content, while the current conveyor isolates the sensing circuit from the bit-lines during its isolation mode.

Career Highlights

Eyal Hartmann is currently employed at Freescale Semiconductor, Inc., where he continues to develop innovative technologies in the semiconductor industry. His work has contributed to advancements in memory device technology, making significant impacts in the field.

Collaborations

Eyal has collaborated with talented coworkers such as Lior Aviv and Ido Levy, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Eyal Hartmann's contributions to memory device technology through his patent and work at Freescale Semiconductor, Inc. highlight his role as an influential inventor in the field. His innovative approach continues to shape advancements in memory sensing technology.

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