Evengi Gousev

Title: Evengi Gousev: Innovator in Semiconductor Technology

Introduction

Evengi Gousev is a notable inventor based in Mahopac, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gate stack structures for metal oxide semiconductor field effect transistors (MOSFETs). His innovative work has led to advancements that enhance device performance and reliability.

Latest Patents

Evengi Gousev holds a patent for a "Method of forming metal/high-k gate stacks with high mobility." This invention provides a gate stack structure that features high mobilities and low interfacial charges. The gate stack structure is strategically positioned between the substrate and an overlaying gate conductor in semiconductor devices. The fabrication method involves a high-temperature annealing process, approximately 800°C, which results in a gate stack structure with an interface state density of about 8×10 charges/cm or less, a peak mobility of about 250 cm/V-s or greater, and minimal mobility degradation at about 6.0×10 inversion charges/cm or greater.

Career Highlights

Evengi Gousev is currently associated with International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced materials and processes that improve the efficiency and performance of electronic devices.

Collaborations

Throughout his career, Evengi has collaborated with talented individuals such as Wanda Andreoni and Alessandro Cesare Callegari. These collaborations have fostered an environment of innovation and have contributed to the success of various projects within the semiconductor industry.

Conclusion

Evengi Gousev's contributions to semiconductor technology exemplify the impact of innovative thinking in the field. His patent and ongoing work at IBM highlight his commitment to advancing technology and improving electronic devices.