Eunsuk Hwang

Title: Eunsuk Hwang: Semiconductor Device Inventor

Introduction

Eunsuk Hwang is an inventor based in Suwon-si, South Korea. His patent work concerns semiconductor device design, and he is associated with Samsung Electronics.

Latest Patents

The provided information lists 1 patent for Hwang: “Semiconductor Devices Including Conductive Pattern on Channel.” The invention describes a semiconductor device with a bit line on a substrate and a gate electrode positioned above and apart from it. A gate insulation pattern and an oxide-semiconductor channel are arranged along the gate electrode’s sidewall. An amorphous oxide-semiconductor conductive pattern contacts the channel’s upper surface, while a metal contact plug contacts the conductive pattern. The amorphous material may include fluorine, chlorine, nitrogen, hydrogen, or argon.

Career Highlights

Hwang’s listed patent reflects work on semiconductor structures and materials, particularly the interface between an oxide-semiconductor channel, a conductive pattern, and a metal contact plug. The supplied information identifies Samsung Electronics as his company.

Collaborations

Sanghoon Uhm and Minhee Cho are listed as Hwang’s coworkers. The provided details do not specify their roles or whether they collaborated on this patent.

Conclusion

Eunsuk Hwang’s listed invention focuses on a semiconductor device architecture that uses oxide-semiconductor materials and a conductive pattern to connect the channel with a metal contact.