Seoul, South Korea

Eunsang Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Qualcomm Incorporated. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eunsang Hwang. Retrieved from https://idiyas.com/inventor/eunsang-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Eunsang Hwang and Patent Innovation in Mobile Network Efficiency.

Introduction

Eunsang Hwang is an inventor based in Seoul, South Korea. His patent work addresses ways to manage network resources and power consumption in mobile devices. He is associated with Qualcomm Incorporated and has 1 patent listed in the information provided.

Latest Patents

Hwang’s patent, “Predicting Bandwidth and Power Savings for Different Form Factors,” describes methods for managing a user equipment device with dual-channel capability. The device determines its maximum throughput from connection parameters, receives an indication that its form factor has changed, and measures actual throughput during a specified time window. It then compares actual throughput with maximum throughput, using one or more thresholds, to decide whether to enable or disable dual connectivity. The approach is intended to support efficient network-resource use and reduce power consumption.

Career Highlights

The available information identifies Hwang as an inventor associated with Qualcomm Incorporated. His patent reflects work on adapting mobile connectivity decisions to device form factors and observed network performance.

Collaborations

Hwang’s listed coworkers include Sunwoo Park and Won-Seon Choi. The provided information does not specify their roles or the details of their collaboration.

Conclusion

Eunsang Hwang’s patent focuses on balancing throughput and power use by adapting dual connectivity to a device’s form factor and measured performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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