Yongin, South Korea

Eunjin Song

This inventor holds 1 USPTO granted patent. Top assignees: Samsung Electronics Ltd., T.e.s., Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eunjin Song. Retrieved from https://idiyas.com/inventor/eunjin-song-6fr8bmg6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Eunjin Song: Integrated Circuit Manufacturing Innovation

Introduction

Eunjin Song is an inventor associated with Yongin, South Korea. Her patent work addresses a method for manufacturing integrated circuit devices, and the provided information lists one patent.

Latest Patents

Song’s patent, “Method of Manufacturing Integrated Circuit Device,” describes a process for partially etching a hafnium oxide film formed on a substrate. The method uses a dry treatment in which the film is exposed isotropically to a gas mixture containing a halogen-containing gas and a hydrogen-containing catalytic gas, without applying plasma to the substrate. This treatment changes components in a surface region of the film. An acidic solution is then used in a wet treatment to remove at least part of that altered region. The dry and wet treatments are repeated in sequence.

Career Highlights

The supplied career information associates Song with Samsung Electronics Ltd. and T.E.S., Inc. Her patent focuses on a controlled approach to processing hafnium oxide films, a material used in integrated circuit manufacturing.

Collaborations

Song’s listed coworker is Joonyoung Kim. The provided information does not specify further details about their collaboration.

Conclusion

Eunjin Song’s listed patent presents a repeated dry-and-wet treatment method for partially etching hafnium oxide films, contributing a specific process innovation to integrated circuit manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…