Gyeonggi-do, South Korea

Eunhye Shin

This inventor holds 3 USPTO granted patents and 3 published patent applications and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eunhye Shin. Retrieved from https://idiyas.com/inventor/eunhye-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 7.1

ph-index = 1


Company Filing History:


Years Active: 2020-2026

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3 patents (USPTO):Explore Patents

Title: Eunhye Shin: Inventor of an Immersive Wearable Device

Introduction

Eunhye Shin is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics. Her listed patent describes a wearable device designed to provide an immersive experience by adapting virtual content to the user and their surroundings.

Latest Patents

Shin is listed with 1 patent: “Wearable Device Providing Immersive Experience and Method of Controlling Same.” The invention uses a camera to identify real-world objects and sensors to determine the wearer’s posture. Based on those inputs, the device determines an immersion level and displays an application screen as a virtual object. It then assesses interaction between the user and the virtual object and can change how that object is displayed according to a second immersion level.

Career Highlights

The patent record connects Shin’s work to Samsung Electronics and highlights an approach to wearable computing that combines environmental recognition, posture sensing, and adaptive virtual displays.

Collaborations

Jaeyung Yeo is identified as Shin’s coworker. The provided information does not specify their role in the patent or describe a direct collaboration.

Conclusion

Eunhye Shin’s listed invention focuses on making wearable experiences responsive to both the user’s posture and their interaction with virtual content.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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