Hwaseong, South Korea

Eun-Tae Kim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eun-Tae Kim. Retrieved from https://idiyas.com/inventor/eun-tae-kim-cpet15fx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: The Innovations of Eun-Tae Kim

Introduction

Eun-Tae Kim is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative methods of forming thin layers. His work is essential in advancing technology in the electronics sector.

Latest Patents

Eun-Tae Kim holds 1 patent for his invention titled "Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same." This patent describes a method of forming a thin layer that includes providing a first deposition source onto a substrate, which does not include tellurium. Additionally, it involves providing a second deposition source that includes a first tellurium precursor and a second tellurium precursor, represented by specific formulas.

Career Highlights

Eun-Tae Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology and electronics industry. His work at Samsung has allowed him to be at the forefront of innovation in memory device technology.

Collaborations

Eun-Tae Kim has collaborated with notable colleagues, including Do-hyung Kim and Sung-Lae Cho. These collaborations have contributed to the development of advanced technologies in their field.

Conclusion

Eun-Tae Kim's contributions to the field of memory devices through his innovative methods and patents highlight his importance as an inventor. His work continues to influence advancements in technology and electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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