This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016
Title: Eun-Sun Noh: Innovator in Magnetoresistive Random Access Memory Technology
Introduction
Eun-Sun Noh is a prominent inventor based in Suwon-si, South Korea. She has made significant contributions to the field of memory technology, particularly in the development of magnetoresistive random access memory (MRAM) devices. Her innovative work has led to advancements that enhance the performance and efficiency of memory storage solutions.
Latest Patents
Eun-Sun Noh holds a patent for "Methods of manufacturing a magnetoresistive random access memory device." This patent outlines a method that involves the sequential formation of a first sacrificial layer, an etch stop layer, and a second sacrificial layer on a substrate. The process includes partial etching to create openings, followed by the formation of lower electrodes to fill these openings. The removal of the sacrificial layers and portions of the etch stop layer results in patterns that define the structure of the MRAM device. This innovative approach contributes to the creation of magnetic tunnel junction (MTJ) structures that are essential for the functionality of MRAM technology.
Career Highlights
Eun-Sun Noh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. Her work at Samsung has positioned her as a key player in the development of advanced memory technologies. With her expertise, she has contributed to the company's reputation for innovation and excellence in electronics.
Collaborations
Throughout her career, Eun-Sun Noh has collaborated with notable colleagues, including Jong-Chul Park and Shin Kwon. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Eun-Sun Noh's contributions to the field of magnetoresistive random access memory technology exemplify her innovative spirit and dedication to advancing memory solutions. Her patent and work at Samsung Electronics Co., Ltd. highlight her role as a significant inventor in the technology landscape.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile