Suwon, South Korea

Eun Sil Park

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021-2025.

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Eun Sil Park

Introduction

Eun Sil Park is a prominent inventor based in Suwon-si, Gyeonggi-do, South Korea. She has made significant contributions to the field of semiconductor technology, holding a total of three patents. Her work is recognized for its innovative approaches to semiconductor devices.

Latest Patents

Eun Sil Park's latest patents include a semiconductor device that features a fin type pattern extending in a first direction on a substrate. This device incorporates a first gate electrode that intersects the fin type pattern, along with a source/drain region located on the side wall of the gate electrode. Additionally, the device includes a separation structure with a first trench, an interlayer insulating layer, and a contact connected to the source/drain region. Another patent details a method for fabricating a semiconductor device with similar structural elements, emphasizing the intricate design and functionality of modern semiconductor technology.

Career Highlights

Eun Sil Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. Her role involves research and development in semiconductor technology, where she applies her expertise to create innovative solutions that enhance device performance.

Collaborations

Eun Sil Park has collaborated with notable coworkers, including Joong Gun Oh and Sung Il Park. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of new patents.

Conclusion

Eun Sil Park's contributions to semiconductor technology exemplify her innovative spirit and dedication to advancing the field. Her patents reflect a deep understanding of complex semiconductor structures and processes.

Profile summary based on public USPTO records.
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