Samsung Electronics Co., Ltd.

Eun Sil Park

Sung Il Park

Hyung Suk Lee

Yun Il Lee

Joong Gun Oh

Jae Hyun Park

A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Semiconductor device

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Growing community of inventors

Suwon-si, Gyeonggi-do, South Korea

Eun Sil Park