Gunpo-si, South Korea

Eun-Jung Yang


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020-2023

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3 patents (USPTO):Explore Patents

Title: ***Innovative Contributions of Eun-Jung Yang in Semiconductor Technology***

Introduction

Eun-Jung Yang, an accomplished inventor based in Gunpo-si, South Korea, has made significant contributions to the field of semiconductor technology. With a total of three registered patents, Yang's innovative work continues to influence advancements in memory devices essential for modern electronics.

Latest Patents

Yang's latest patents focus on three-dimensional semiconductor memory devices. The innovations disclosed include an intricate electrode structure with gate electrodes stacked in a specific direction, and a lower pattern group consisting of vertical patterns connected to the substrate. The design also features an upper pattern group with upper vertical patterns linking back to the lower vertical patterns. Furthermore, the devices incorporate two common source plugs situated apart from each other, with the electrode structure residing in between. A unique aspect of the design includes varying widths for the lower and upper pattern groups, enhancing performance and efficiency in semiconductor applications.

Career Highlights

Eun-Jung Yang currently works at Samsung Electronics Co., Ltd., a recognized leader in the electronics industry. As part of this esteemed company, she has played a crucial role in advancing semiconductor technology through her inventions, contributing to Samsung's reputation for cutting-edge innovations in the tech sphere.

Collaborations

Throughout her career, Yang has collaborated with esteemed colleagues like Taehee Lee and Hyunwook Kim. These collaborative efforts have fostered a dynamic environment for progress and innovation, allowing for the sharing of ideas and expertise, which has been instrumental in the success of their collective projects.

Conclusion

Eun-Jung Yang stands out as a key figure in semiconductor innovation. Her contributions, particularly in the development of three-dimensional memory devices, signify the importance of her work in shaping the future of electronics. As technology continues to evolve, inventors like Yang remain vital to driving the industry forward through their creativity and ingenuity.

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