Lafayette, CO, United States of America

Eugene Iwancizko

This inventor holds 1 USPTO granted patent. Top assignee: Midwest Research Institute. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eugene Iwancizko. Retrieved from https://idiyas.com/inventor/eugene-iwancizko

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Eugene Iwancizko

Introduction

Eugene Iwancizko is a notable inventor based in Lafayette, Colorado. He has made significant contributions to the field of chemical vapor deposition processes. His work focuses on enhancing the efficiency of epitaxial growth techniques, which are crucial in various technological applications.

Latest Patents

Eugene holds a patent for "Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process." This invention provides a process for depositing an epitaxial layer on a crystalline substrate. The method involves several steps, including providing a chamber with a heating element, introducing the substrate, and forming the epitaxial layer through the decomposition of a source gas.

Career Highlights

Eugene Iwancizko is associated with the Midwest Research Institute, where he has been able to apply his innovative ideas in a collaborative research environment. His work has contributed to advancements in material science and semiconductor technology.

Collaborations

Eugene has worked alongside notable colleagues such as Kim M Jones and Richard S Crandall. Their combined expertise has fostered a productive research atmosphere, leading to significant advancements in their respective fields.

Conclusion

Eugene Iwancizko's contributions to the field of chemical vapor deposition and epitaxial growth processes highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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