Company Filing History:
Years Active: 1986-2000
Title: The Innovations of Eugene E Haller
Introduction
Eugene E Haller is a notable inventor based in Berkeley, CA, recognized for his contributions to the field of semiconductor technology. With a total of 3 patents, Haller has made significant advancements in the doping of germanium and silicon crystals, which are crucial for the development of far infrared lasers.
Latest Patents
Haller's latest patents include innovative methods for doping semiconductors. One of his patents focuses on the doping of germanium and silicon crystals with non-hydrogenic acceptors, which enhances the performance of far infrared lasers. Another patent details a far infrared laser that utilizes germanium crystals doped with double or triple acceptor dopants, allowing for continuous tuning from 1 to 4 terahertz. Additionally, he has developed a method for operating semiconductor hole population inversion lasers using a closed cycle refrigerator. His work also includes the creation of hard carbon nitride, a novel crystalline material formed by sputtering carbon in a nitrogen atmosphere onto single crystal germanium or silicon substrates.
Career Highlights
Throughout his career, Haller has been associated with prestigious institutions such as the University of California and the United States of America as represented by the United States. His work has significantly impacted the field of semiconductor research and development.
Collaborations
Haller has collaborated with esteemed colleagues, including William L Hansen and Marvin Lou Cohen, contributing to various advancements in semiconductor technology.
Conclusion
Eugene E Haller's innovative work in semiconductor doping and laser technology has established him as a prominent figure in his field. His patents reflect a commitment to advancing technology and improving the functionality of semiconductor devices.