Ibaraki, Japan

Etsuo Ishitsuka

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Japan Atomic Energy Institute, Ngk Insulators, Inc.. Active years: 1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Etsuo Ishitsuka. Retrieved from https://idiyas.com/inventor/etsuo-ishitsuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: Etsuo Ishitsuka: Innovator in Beryllium Processing

Introduction

Etsuo Ishitsuka is a notable inventor based in Ibaraki, Japan. He is recognized for his contributions to the field of materials science, particularly in the processing of metallic beryllium. His innovative work has led to the development of a unique method for preparing metallic beryllium pebbles.

Latest Patents

Etsuo Ishitsuka holds a patent for the "Process for preparing metallic beryllium pebbles." This patent highlights his expertise and innovative approach in the field, showcasing his ability to contribute significantly to materials technology.

Career Highlights

Throughout his career, Ishitsuka has worked with esteemed organizations such as the Japan Atomic Energy Institute and NGK Insulators, Inc. His experience in these institutions has allowed him to collaborate with leading experts in the field and further his research in beryllium processing.

Collaborations

Ishitsuka has collaborated with notable colleagues, including Hiroshi Kawamura and Naoki Sakamoto. These partnerships have enriched his work and contributed to advancements in the field of materials science.

Conclusion

Etsuo Ishitsuka's contributions to the processing of metallic beryllium are significant, and his patent reflects his innovative spirit. His career and collaborations demonstrate his commitment to advancing materials technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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