Machida, Japan

Etsuko Iguchi

This inventor holds 23 USPTO granted patents, primarily in Photoresist Technology. Top assignee: Tokyo Ohka Kogyo Co., Ltd.. Active years: 1997-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Etsuko Iguchi. Retrieved from https://idiyas.com/inventor/etsuko-iguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 91.3

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 179(Granted Patents)


Location History:

  • Tokyo-to, JP (1998 - 1999)
  • Machida, JP (1997 - 2004)
  • Tokyo, JP (2000 - 2004)

Company Filing History:


Years Active: 1997-2004

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Areas of Expertise:
Photoresist
Coating Composition
Photolithography
Patterning
Dual Damascene
Negative Resist
Positive Resist
Chemical Amplification
Multilayer Materials
Planarizing Coating
Fine Hole Filling
Polyhydroxstyrene
23 patents (USPTO):Explore Patents

Title: Etsuko Iguchi: A Pioneer in Semiconductor Innovations

Introduction

Etsuko Iguchi, based in Machida, Japan, is a notable inventor with an impressive portfolio of 23 patents. His work primarily focuses on innovations in the semiconductor industry, addressing critical challenges in manufacturing processes.

Latest Patents

Among his most recent patents, Iguchi has developed a protective coating composition for the dual damascene process. This invention provides a protective coating solution that is especially suited for creating a resinous protective layer on patterned resist layers utilized in semiconductor devices. It is particularly beneficial in areas with densely populated hole patterns as well as isolated hole patterns. The solution consists of a resinous compound, like an acrylic resin, in conjunction with a crosslinking compound, such as a triazine compound, combined in specific proportions to ensure even coating thickness and complete filling of voids within the hole patterns.

Additionally, he has devised a method for effectively filling fine holes that have a diameter of 0.18 micrometers or less. This method involves several steps, including the use of a nitrogen-containing filler obtained by dissolving specific compounds in an organic solvent. The process allows the fine holes to be filled without generating bubbles, which is crucial for maintaining the integrity of semiconductor devices.

Career Highlights

Etsuko Iguchi works at Tokyo Ohka Kogyo Co., Ltd., a company renowned for its contributions to semiconductor manufacturing. His expertise and innovative approaches have played a significant role in advancing the company's technological capabilities in the realm of semiconductor coatings and filling techniques.

Collaborations

Throughout his career, Iguchi has collaborated with esteemed colleagues, including Mitsuru Sato and Toshimasa Nakayama. Their joint efforts contribute to a dynamic research environment that fosters groundbreaking advancements in semiconductor technology.

Conclusion

Etsuko Iguchi's contributions to the field of semiconductor innovation reflect his dedication and ingenuity as an inventor. With a robust patent portfolio and a commitment to enhancing manufacturing processes, he continues to make significant strides that impact the semiconductor industry and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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