Quebec, Canada

Etienne Therriault

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Ciena Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Etienne Therriault. Retrieved from https://idiyas.com/inventor/etienne-therriault

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Etienne Therriault: Inventor in High-Speed Signal Transmission.

Introduction

Etienne Therriault is an inventor associated with Ciena Corporation and based in Quebec, Canada. His patent work addresses the transmission of electromagnetic signals between integrated-circuit device planes.

Latest Patents

Therriault is credited with 1 patent: “Transmitting Electromagnetic Signals Over an Interface Transition Region Between Integrated Circuit Device Planes.” The invention describes an apparatus with two interfaces: one using edge-coupled coplanar striplines and another using edge-coupled striplines. A transition structure connects their conductor strips, with at least part of the structure using broad-side coupled conductors. The design concerns signal transmission across the transition between the two interfaces.

Career Highlights

Therriault’s listed patent reflects work on interconnect structures for moving electromagnetic signals between integrated-circuit device planes. He is associated with Ciena Corporation.

Collaborations

Gregory Brookes and Maxime Jacques are identified as Therriault’s coworkers. The available information does not specify their roles in the patent.

Conclusion

Etienne Therriault’s recorded invention focuses on an interface transition structure for transmitting electromagnetic signals between integrated-circuit device planes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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