Peekskill, NY, United States of America

Eti Ganin


Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 78(Granted Patents)


Company Filing History:


Years Active: 1989-2004

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2 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Eti Ganin

Introduction: Eti Ganin, a remarkable inventor based in Peekskill, NY, has made significant strides in the field of semiconductor technology. With two patents to her name, she is recognized for her innovative approaches that address key challenges in electronic components.

Latest Patents: Eti Ganin's latest patents showcase her expertise and creativity in the semiconductor domain. The first patent, titled "Superconductor Gate Semiconductor Channel Field Effect Transistor," introduces an advanced field effect transistor (FET) design. This patent emphasizes the use of a high-temperature oxide superconductor material in the gate electrode, allowing for effective control of parasitic resistance and capacitance, especially when operated at lower temperatures. Her second patent, "Method for Fabricating Shallow Junctions by Preamorphizing with Dopant," outlines a novel fabrication method for shallow junctions in semiconductors. This technique involves doping the substrate with an oppositely charged dopant to preamorphize portions of the substrate, ensuring optimal characteristics for semiconductor devices.

Career Highlights: Eti Ganin works at the esteemed International Business Machines Corporation (IBM), where her contributions to research and development have significantly impacted the semiconductor industry. Her work focuses on developing technologies that enhance the performance and efficiency of electronic devices, steering innovations towards practical applications.

Collaborations: Throughout her career, Eti has worked alongside prominent colleagues, such as George A. Sai-Halasz and Praveen Chaudhari. These collaborations foster a dynamic environment for creative problem-solving and technological advancement, solidifying her role as a pivotal figure in her field.

Conclusion: Eti Ganin stands as an inspiring example in the world of innovations and inventions. Her groundbreaking patents and collaborations demonstrate her commitment to advancing semiconductor technology, marking her as a significant inventor in today’s rapidly evolving technological landscape. With her continued dedication, she is poised to influence future developments in this vital industry.

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