The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Feb. 24, 1992
Praveen Chaudhari, Briarcliff Manor, NY (US);
Richard Joseph Gambino, Yorktown Heights, NY (US);
Eti Ganin, Peekskill, NY (US);
Roger Hilsen Koch, Amawalk, NY (US);
Lia Krusin-Elbaum, Dobbs Ferry, NY (US);
Robert Benjamin Laibowitz, Reekskill, NY (US);
George Anthony Sai-Halasz, Mount Kisco, NY (US);
Yuan-Chen Sun, Katonah, NY (US);
Matthew Robert Wordeman, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a Field Effect Transistor (FET) with a semiconductor channel the use of a high T oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the T . The 1-2-3 compound oxide superconductors with the general formula Y Ba Cu O where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.