Ernest H A Granneman

Title: The Innovative Contributions of Ernest H A Granneman

Introduction

Ernest H A Granneman is a notable inventor based in Hilversum, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and effectiveness of semiconductor devices.

Latest Patents

Granneman holds a patent titled "Methods of forming films in semiconductor devices with solid state reactants." This patent describes a method of self-aligned silicidation that interrupts the silicidation process before the complete reaction of the blanket material, such as metal, occurs. This technique prevents the diffusion of excess blanket material from regions overlying insulators, ensuring control and uniformity through the use of conductive rapid thermal annealing in hot wall reactors. The method is further enhanced by forced cooling and conductive thermal exchange with closely spaced, massive plates.

Career Highlights

Granneman is associated with ASML Holding N.V., a leading company in the semiconductor industry. His work has contributed to advancements in semiconductor manufacturing processes, making them more efficient and reliable. His innovative approaches have positioned him as a key figure in the field.

Collaborations

Throughout his career, Granneman has collaborated with esteemed colleagues, including Vladimir Ivanovich Kuznetsov and Xavier Pages. These collaborations have fostered a rich exchange of ideas and have led to further advancements in semiconductor technology.

Conclusion

Ernest H A Granneman's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.