St. Louis, MO, United States of America

Erik Henriksen

This inventor holds 1 USPTO granted patent. Top assignees: The Trustees of Boston College, Washington University. Active years: 2026.


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Erik Henriksen

Introduction

Erik Henriksen is a notable inventor based in St. Louis, MO (US). He has made significant contributions to the field of materials science, particularly in the area of two-dimensional (2D) materials. His work focuses on controlling charge transfer in these advanced materials, which has implications for various technological applications.

Latest Patents

Henriksen holds a patent titled "Method of controlling charge doping in van der Waals heterostructures." This patent is directed towards controlling charge transfer in 2D materials. The invention describes a charge-transfer controlled 2D device that comprises a 2D active conducting material and a 2D charge transfer source material. The design includes at least one overlapping portion where the 2D active conducting material overlaps the 2D charge transfer source material, including at least one edge of the 2D charge transfer source material. He has 1 patent to his name.

Career Highlights

Throughout his career, Erik Henriksen has worked with prestigious institutions, including Washington University and The Trustees of Boston College. His research has contributed to advancements in the understanding and application of 2D materials in various fields.

Collaborations

Henriksen has collaborated with notable colleagues such as Jesse Balgley and Kenneth S Burch. These partnerships have fostered innovation and have been instrumental in the development of his research projects.

Conclusion

Erik Henriksen's work in controlling charge transfer in 2D materials showcases his innovative spirit and dedication to advancing materials science. His contributions are paving the way for future developments in technology and research.

Profile summary based on public USPTO records.
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