Endicott, NY, United States of America

Eric Lee Carter


Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 1981-2001

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Eric Lee Carter

Introduction

Eric Lee Carter is a notable inventor based in Endicott, NY (US). He has made significant contributions to the field of electronic memory design, holding a total of 4 patents. His work focuses on enhancing memory functionality and efficiency, particularly in low voltage applications.

Latest Patents

Carter's latest patents include a "Write through function for a memory" and a "High density two port SRAM cell for low voltage CMOS applications." The first patent describes a multi-port electronic memory with a write-through capability. It features control mechanisms that enable a write-through path to an output and can be disabled without causing data errors due to design and technology variations. This innovation is particularly beneficial for use with compilable SRAM books. The second patent presents a two-port memory cell design that allows simultaneous reading and writing of cells on the same wordline but on different Bit Select lines. This design maintains memory functionality at low voltages while ensuring fast access through a standard 6 transistor design, enhanced with additional transistors for differential writing.

Career Highlights

Carter is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has positioned him as a key player in the development of advanced memory technologies.

Collaborations

Carter has collaborated with notable colleagues, including Moon Ho Lee and Michael Richard Ouellette. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Eric Lee Carter's innovative work in electronic memory design has made a lasting impact on the industry. His patents reflect a commitment to advancing technology and improving memory efficiency.

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