Orlando, FL, United States of America

Eric John Persson


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Eric John Persson: Innovator in Silicon Layer Doping

Introduction

Eric John Persson is an inventive mind located in Orlando, Florida. He has made significant contributions to the field of semiconductor technology, especially in the area of silicon layer processing. With a patent to his name, Persson has demonstrated his expertise and innovative thinking in engineering.

Latest Patents

Eric John Persson is credited with a notable patent pertaining to the doping of silicon layers. His patent describes a process for forming a P.sub.2 O.sub.5 layer suitable for diffusion doping polysilicon gates. This innovative process boasts a reduced thermal budget and effectively addresses the issue of subsequent gate oxide roughness, marking a significant advancement in semiconductor fabrication.

Career Highlights

Persson works at Lucent Technologies Inc., a prominent company recognized for its advancements in telecommunications and technology. His work focuses on enhancing processes that are critical to the fabrication of electronic devices, contributing to the overall progress within the semiconductor industry.

Collaborations

Throughout his career, Eric has collaborated with notable colleagues, including Steven Alan Lytle and Yaw S Obeng. These partnerships have likely fostered an environment for innovation and problem-solving in their respective projects.

Conclusion

With a solid track record in semiconductor innovations, Eric John Persson continues to pave the way for technological advancements in the industry. His insights and contributions, epitomized by his patented process for doping silicon layers, reflect his commitment to enhancing the performance and reliability of modern electronic devices.

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