Saratoga, CA, United States of America

Eric Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eric Hwang. Retrieved from https://idiyas.com/inventor/eric-hwang-pqbvasn2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Eric Hwang - Innovator in Memory Management

Introduction

Eric Hwang is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of computer science, particularly in memory management. His innovative approach to detecting memory leakage in linked lists has garnered attention in the tech community.

Latest Patents

Eric Hwang holds a patent for a "Method to detect unbounded growth of linked lists in a running application." This method addresses the critical issue of memory leakage in linked lists by implementing a system that tracks the size of the linked list as new elements are added. The process involves saving the current size as a new maximum and determining if the new maximum exceeds the former size within specified time frames.

Career Highlights

Eric is currently employed at Hewlett-Packard Development Company, L.P., where he continues to work on innovative solutions in technology. His expertise in memory management and software development has made him a valuable asset to his team.

Collaborations

Eric collaborates with James Russell Curtis, leveraging their combined skills to enhance their projects and drive innovation within their company.

Conclusion

Eric Hwang's contributions to memory management through his patent demonstrate his commitment to advancing technology. His work at Hewlett-Packard Development Company, L.P. continues to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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