Tokyo, Japan

Eri Aizawa

This inventor holds 1 USPTO granted patent. Top assignee: Tdk Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eri Aizawa. Retrieved from https://idiyas.com/inventor/eri-aizawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Eri Aizawa: Innovator in Thin-Film Capacitor Technology

Introduction

Eri Aizawa is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of thin-film capacitor technology. Her innovative work focuses on enhancing the performance of barium strontium titanate (BST) thin-film capacitors.

Latest Patents

Eri Aizawa holds a patent for a process aimed at producing a BST thin-film capacitor with increased capacity density and reduced leakage current density. The patent outlines a method that utilizes an oxygen-containing inert gas atmosphere during the firing of the organic dielectric starting material. This process results in a barium strontium titanate thin-film that exhibits a larger capacity density compared to those fired in a conventional oxygen atmosphere.

Career Highlights

Eri Aizawa is currently employed at TDK Corporation, where she continues to advance her research and development efforts. Her work has been instrumental in improving the efficiency and reliability of thin-film capacitors, which are critical components in various electronic devices.

Collaborations

Eri collaborates with notable colleagues, including Kenji Horino and Kiyoshi Uchida. Their combined expertise contributes to the innovative projects at TDK Corporation.

Conclusion

Eri Aizawa's contributions to thin-film capacitor technology exemplify her dedication to innovation in the field. Her patented process not only enhances the performance of capacitors but also paves the way for future advancements in electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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