Eran Sharon

Title: Innovations by Eran Sharon in Memory Technology

Introduction

Eran Sharon is an accomplished inventor based in Rishon Lezion, Israel. He has made significant contributions to the field of memory technology, particularly in the area of error-rate estimation for encoded programming. His innovative approach has the potential to enhance the reliability and efficiency of memory operations.

Latest Patents

Eran Sharon holds a patent titled "Low complexity bit-error-rate estimation for encoded foggy-fine programming." This patent describes a method where a memory die estimates a bit-error-rate (BER) for an encoded foggy program operation. The memory die utilizes the BER to determine whether to decode foggy programmed data for a fine programming operation. The controller on the die receives data from a storage device and generates parity pages based on this data. It performs a foggy program operation to write the data to memory cells in a block. The controller categorizes states in a memory cell based on the value of a parity page associated with a state. Additionally, it conducts soft bit sensing operations to estimate the BER for the memory cell. Based on the estimated BER, the memory controller can either perform on-die decoding of the foggy programmed data with the parity pages or transfer the data to the storage device for decoding.

Career Highlights

Eran Sharon is currently associated with SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His work focuses on improving the performance and reliability of memory systems, which is crucial for modern computing applications.

Conclusion

Eran Sharon's contributions to memory technology, particularly through his patent on bit-error-rate estimation, showcase his innovative spirit and technical expertise. His work at SanDisk Technologies Inc. positions him as a key player in advancing memory technology solutions.