RU

Ep Sheshin

This inventor holds 0 USPTO granted patents, plus 1 CIPO patent.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ep Sheshin. Retrieved from https://idiyas.com/inventor/ep-sheshin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

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Title: Ep Sheshin: Innovator in Field Emission Cathodes

Introduction

Ep Sheshin is a notable inventor based in Russia, recognized for his contributions to the field of field emission technology. His innovative work focuses on the development of improved field emission cathodes, which are essential components in various electronic devices.

Latest Patents

Ep Sheshin holds a patent titled "A Field Emission Cathode And Methods In The Production Thereof." This patent describes an enhanced field emission cathode and outlines methods for its fabrication. The invention involves creating irregularities on the emitting surface of a body made from a first substance. The process includes adding ions of a second substance with a low work function to the emitting surface and modifying it by inducing field emission through a variable electric field, increasing the field strength in steps. Despite his innovative work, he currently has 0 patents.

Career Highlights

Ep Sheshin is associated with Light-Lab AB, where he continues to explore advancements in field emission technology. His work has the potential to impact various applications in electronics and materials science.

Collaborations

He has collaborated with notable colleagues, including Al Suvorov and Vs Kaftanov, contributing to a dynamic research environment that fosters innovation.

Conclusion

Ep Sheshin's work in the field of field emission cathodes showcases his commitment to advancing technology in this area. His innovative methods and collaborations highlight the importance of teamwork in achieving significant breakthroughs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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