This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: En-Ping Lin: Innovator in Semiconductor Technology
Introduction
En-Ping Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-mobility p-channel transistors. His innovative work has led to advancements that enhance the performance of semiconductor devices.
Latest Patents
En-Ping Lin holds a patent titled "Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors." This patent describes a method that includes providing a substrate with a first semiconductor material, creating a mask that covers an nFET region of the substrate, etching a pFET region to form a trench, and epitaxially growing a second semiconductor material in the trench. The process involves patterning the nFET and pFET regions to produce fins that improve device performance. He has 1 patent to his name.
Career Highlights
En-Ping Lin is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His work at this esteemed organization has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in technology.
Collaborations
Some of his notable coworkers include Yu-Ling Ko and Kun-Yu Lin. Their collaborative efforts have further propelled innovations in semiconductor technology.
Conclusion
En-Ping Lin's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His patent and work at Taiwan Semiconductor Manufacturing Co., Ltd. highlight his role as a key player in advancing semiconductor performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile