En Hao Lai

Title: En Hao Lai: Innovator in Extreme Ultraviolet Lithography

Introduction

En Hao Lai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of extreme ultraviolet lithography, holding a total of four patents. His work focuses on enhancing the efficiency and effectiveness of lithography systems, which are crucial in semiconductor manufacturing.

Latest Patents

One of En Hao Lai's latest patents involves a method for particle image velocimetry of extreme ultraviolet lithography systems. This method includes irradiating a target droplet in an extreme ultraviolet light source with non-ionizing light from a droplet illumination module. The process further involves detecting light that is reflected and/or scattered by the target droplet. By performing particle image velocimetry based on the detected light, the velocity of the target droplet can be determined. Additionally, the method includes adjusting the time delay between the generation of the target droplet and the excitation laser beam based on the droplet's velocity. Another patent also focuses on particle image velocimetry, monitoring flow parameters inside the extreme ultraviolet light source.

Career Highlights

En Hao Lai is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in lithography technology, which is essential for producing high-performance microchips.

Collaborations

En Hao Lai has collaborated with notable colleagues, including Shang-Chieh Chien and Li-Jui Chen. Their teamwork has fostered a productive environment for innovation and research in their field.

Conclusion

En Hao Lai's contributions to extreme ultraviolet lithography demonstrate his expertise and commitment to advancing semiconductor technology. His patents reflect a deep understanding of the complexities involved in lithography systems, making him a valuable asset to the industry.