Location History:
- Sachse, TX (US) (2007 - 2017)
- Whitesboro, TX (US) (2019 - 2021)
Company Filing History:
Years Active: 2007-2021
Title: Emily Ann Donnelly: Innovator in Radiation Hardening Technologies
Introduction
Emily Ann Donnelly is a prominent inventor based in Sachse, TX (US), known for her significant contributions to the field of integrated circuit design. With a total of 6 patents to her name, she has made remarkable advancements in radiation hardening technologies, particularly in CMOS devices.
Latest Patents
Donnelly's latest patents focus on devices and methods for radiation hardening integrated circuits using shallow trench isolation. These designs improve total ionizing dose (TID) radiation response by reducing leakage currents from source to drain, which are associated with corners and sidewalls of trench insulator edges passing under the gate in NMOS devices. Her innovations maintain high breakdown voltage while employing a silicide block pattern in combination with the pullback of N+ source and drain regions. Additional p-type implants along these edges further enhance radiation hardness by increasing parasitic threshold voltages. The processes she developed are applicable to low-voltage NMOS transistors with straight gates and high-voltage annular-gate devices, as well as device-to-device isolation in integrated circuits.
Career Highlights
Throughout her career, Emily Ann Donnelly has worked with notable companies such as Tallannquest LLC and Texas Instruments Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking technologies in the semiconductor industry.
Collaborations
Donnelly has collaborated with talented individuals in her field, including Jin Liu and Pamula Jean Jones-Williams. These partnerships have fostered innovation and have been instrumental in her research and development efforts.
Conclusion
Emily Ann Donnelly's work in radiation hardening technologies has positioned her as a leading inventor in the semiconductor industry. Her patents and collaborations reflect her commitment to advancing integrated circuit design and enhancing device performance.