Tallannquest LLC

Texas Instruments Corporation

Emily Ann Donnelly

Jin Liu

Pamula Jean Jones-Williams

Jianglin Wang

Designs for radiation hardening CMOS devices and integrated circuits using shallow trench isolation (STI) improve total ionizing dose (TID) radiation response by reducing the leakage currents from source to drain associated with corners and sidewalls of trench insulator edges passing under the gate in an NMOS device while maintaining high breakdown voltage. A silicide block pattern is used in combination with pullback of N+ source and drain regions from at least a portion of these edges of the active region. Additional p-type implants along these edges further increase parasitic threshold voltages and enhance radiation hardness. A process for fabricating devices and integrated circuits incorporating these features is also provided. These techniques and processes are applied to exemplary low-voltage NMOS transistors having straight gates and to high-voltage annular-gate devices, as well as to device-to-device isolation in integrated circuits.

Devices and methods for radiation hardening integrated circuits using shallow trench isolation

A method, system, and computer program product include electronic design automation (EDA) tools used with standard CMOS processes to design and produce radiation-hardened (rad-hard) integrated circuits (ICs) having a predictable level of radiation hardness while maintaining a desired level of performance and tracking circuit area. The tools include rad-hard design rule checking (DRC) decks, rad-hard SPICE models, and rad-hard cell libraries. A rad-hard parasitic components extraction process makes use of rad-hard DRC rules to locate occurrences of parasitic devices, calculate their effects on circuit performance, and return this information to layout and circuit simulation tools. Changes to the layout are suggested and implemented with varying degrees of automation. Some of these tools can be provided as components of a rad-hard process design kit (PDK). They can be used in conjunction with commercial EDA tools to facilitate the incorporation of rad-hard features into new or existing IC designs.

Method and system for computer-aided design of radiation-hardened integrated circuits

According to one embodiment, a method of analyzing semiconductor test data includes receiving a plurality of raw data entries from a testing system. Each raw data entry is associated with a test structure of a semiconductor device, and each raw data entry is uniquely identified by a name including a plurality of parseable fields. The plurality of data entries is parsed using a selected one of the plurality of parseable fields to identify a grouping of raw data entries. At least one reportable parameter indicative of the functionality of the test structures associated with the grouping of raw data entries is calculated, and the at least one reportable parameter is provided to a user.

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Sachse, TX, United States of America

Emily Ann Donnelly