Tottori, Japan

Emi Nakagawa

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi Ferrite, Ltd.. Active years: 1997.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Emi Nakagawa: Innovator in Ni Ferrite Technology

Introduction

Emi Nakagawa is a prominent inventor based in Tottori, Japan. She has made significant contributions to the field of materials science, particularly in the development of Ni ferrite technology. Her innovative work has led to advancements in power supply applications.

Latest Patents

Emi Nakagawa holds a patent for a Ni ferrite sintered body. This invention comprises 48.0-50.0 mol % of Fe₂O₃, 14.0-24.0 mol % of NiO, and 28.0-36.0 mol % of ZnO, with 50 ppm or less of phosphorus as an impurity. The sintered body is designed to achieve a minimum core loss of 30 kW/m³ or less at 50 kHz and 50 mT. Additionally, the segregation percentage of phosphorus in the crystal structure is maintained at 1% or less by area. The average crystal grain size of the Ni ferrite sintered body is ideally between 3-30 μm, with the percentage of crystal grain particles larger than twice the average size being 10% or less.

Career Highlights

Emi Nakagawa is currently employed at Hitachi Ferrite, Ltd., where she continues to push the boundaries of innovation in ferrite materials. Her work has been instrumental in enhancing the efficiency and performance of power supply systems.

Collaborations

Emi collaborates with notable colleagues, including Akio Uchikawa and Norikazu Koyuhara. Their combined expertise fosters a dynamic environment for research and development in the field of ferrite technology.

Conclusion

Emi Nakagawa's contributions to Ni ferrite technology exemplify her dedication to innovation and excellence in materials science. Her patent and ongoing work at Hitachi Ferrite, Ltd. highlight her role as a leading inventor in this specialized field.

Profile summary based on public USPTO records.
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