Emi Ishida

Title: Emi Ishida: Innovator in Semiconductor Technology

Introduction

Emi Ishida is a prominent inventor based in Stanford, California. She has made significant contributions to the field of semiconductor technology, particularly in the formation of shallow junctions in semiconductor devices. Her innovative approach has garnered attention in the research community.

Latest Patents

Emi Ishida holds a patent titled "Method of shallow junction formation in semiconductor devices using gas." This patent describes a process where shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere that includes the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation, allowing the dopant to be driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms before the irradiation occurs. Emi Ishida has 1 patent to her name.

Career Highlights

Emi Ishida is affiliated with Leland Stanford Junior University, where she continues her research and development in semiconductor technologies. Her work has been instrumental in advancing the understanding and application of shallow junction formation techniques.

Collaborations

Emi has collaborated with notable colleagues, including Thomas W. Sigmon and William Thomas Lynch. Their combined expertise has contributed to the success of various projects in the semiconductor field.

Conclusion

Emi Ishida is a trailblazer in semiconductor technology, with her innovative methods paving the way for advancements in the industry. Her contributions are vital to the ongoing evolution of semiconductor devices.