This inventor holds 1 USPTO granted patent. Top assignees: International Business Machines Corporation, Siemens Aktiengesellschaft. Active years: 1997.
Company Filing History:


Years Active: 1997
Title: The Innovative Contributions of Elke Eckstein
Introduction
Elke Eckstein is a prominent inventor based in Paris, France. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent related to silicon etching processes. Her work has implications for the manufacturing of advanced electronic devices.
Latest Patents
Elke Eckstein holds a patent for an isotropic silicon etch process that is highly selective to tungsten. This back end of the line dry etch method involves etching a mask oxide and a temporary silicon mandrel after the formation of gate stacks and tungsten studs. The process utilizes a polymerizing oxide etch to selectively etch the mask oxide relative to tungsten and silicon. Additionally, it allows for the selective etching of silicon compared to silicon nitride, silicon oxide, and tungsten. The method effectively removes the silicon mandrel and associated silicon residual stringers by adjusting various parameters during the etching process. This innovative approach can utilize undoped polysilicon, doped polysilicon, or single crystal silicon.
Career Highlights
Throughout her career, Elke Eckstein has worked with leading companies in the technology sector. Notably, she has been associated with IBM and Siemens Aktiengesellschaft. Her experience in these organizations has contributed to her expertise in semiconductor manufacturing and innovation.
Collaborations
Some of her notable coworkers include Waldemar Walter Kocon and Edward William Kiewra. Their collaboration has likely fostered an environment of innovation and technological advancement.
Conclusion
Elke Eckstein's contributions to the field of semiconductor technology through her patented isotropic silicon etch process highlight her role as a leading inventor. Her work continues to influence the development of advanced electronic devices.